Method of detecting defect location using multi-surface specular reflection

ABSTRACT

A method for detecting defects includes directing a scanning beam to a location on a surface of a transparent sample, measuring top and bottom surface specular reflection intensity, and storing coordinate values of the first location and the top and bottom surface specular reflection intensity in a memory. The method may further include comparing the top surface specular reflection intensity measured at each location with a first threshold value, comparing the bottom surface specular reflection intensity measured at each location with a second threshold value, and determining if a defect is present at each location and on which surface the defect is present. The method may further include comparing the top surface specular reflection intensity measured at each location with a first intensity range, comparing the bottom surface specular reflection intensity measured at each location with a second intensity range, and determining on which surface the defect is present.

TECHNICAL FIELD

The described embodiments relate generally to detecting defects and moreparticularly to detecting the location of a defect on a surface of atransparent sample.

BACKGROUND INFORMATION

Transparent solids are used to form various products such as display andtouch screen devices. The inspection of transparent solids iscomplicated by the difficulty of separating specular reflection from thetop surface of a transparent sample from specular reflection from thebottom surface of a transparent sample. This difficulty is furthercomplicated when there is only time for a single scan to be performed atany given location on the transparent sample.

SUMMARY

In a first novel aspect, an optical inspector, including a time varyingbeam reflector, a radiating source that irradiates the time varying beamreflector, a telecentric scan lens configured to direct the radiationreflected by the time varying beam reflector onto a first surface of atransparent sample, where a portion of the radiation irradiates a secondsurface of the transparent sample. The optical inspector also includes afirst detector that receives at least a portion of top surface specularreflection, where the top surface specular reflection results from theirradiation of the first surface of the transparent sample. The opticalinspector also includes a second detector that receives at least aportion of the bottom surface specular reflection, where the bottomsurface specular reflection results from the irradiation of the secondsurface of the transparent sample.

In a second novel aspect, an optical inspector, that includes a timevarying beam reflector, a radiating source that irradiates the timevarying beam reflector, a telecentric scan lens configured to direct theradiation reflected by the time varying beam reflector onto a firstsurface of a transparent sample, where a portion of the radiationirradiates a second surface of the transparent sample. The opticalinspector also includes a first means for separating top surfacespecular reflection from bottom surface specular reflection, where thetop surface specular reflection results from the irradiation of thefirst surface of the transparent sample, and where the bottom surfacespecular reflection results from the irradiation of the second surfaceof the transparent sample. The optical inspector further includes asecond means for determining on which surface a defect is present.

In one example, an optical inspector includes a turning mirror, wherethe turning mirror is a switchable mirror that can be (i) adjusted to afirst position where the turning mirror reflects the top surfacespecular reflection and the bottom surface specular reflection, and (ii)can be adjusted to a second position where the turning mirror does notreflect the top surface specular reflection or the bottom surfacespecular reflection.

In another example, the optical inspector includes a first polarizingelement that receives the top surface specular reflection, where thefirst detector receives at least a portion of polarized top surfacespecular reflection that passed through the first polarizing element.

In yet another example, the optical inspector includes a secondpolarizing element that receives the bottom surface specular reflection,where the second detector receives at least a portion of polarizedbottom surface specular reflection that passed through the secondpolarizing element.

In a third novel aspect, an optical inspector, includes a time varyingbeam reflector, a radiating source that irradiates the time varying beamreflector, a telecentric scan lens configured to direct the radiationreflected by the time varying beam reflector onto a first surface of atransparent sample, where a portion of the radiation irradiates a secondsurface of the transparent sample. The optical inspector also includes afirst means for separating top surface specular reflection from bottomsurface specular reflection, where the top surface specular reflectionresults from the irradiation of the first surface of the transparentsample, and where the bottom surface specular reflection results fromthe irradiation of the second surface of the transparent sample. Theoptical inspector also includes a second means for determining on whichsurface a defect is present.

In one example, the first means includes a separation mirror that isconfigured to only reflect specular reflection from one surface of thetransparent sample.

In another example, the second means includes a first detector, and asecond detector, wherein the first detector measures top surfacespecular reflection intensity, and wherein the second detector measuresbottom surface specular reflection intensity.

In a fourth novel aspect, a method for detecting defects includes (a)directing a scanning beam to a first location on a first surface of atransparent sample, where a portion of the scanning beam irradiates asecond surface of the transparent sample, (b) at the first location,measuring top surface specular reflection intensity and bottom surfacespecular reflection intensity, where the top surface specular reflectionintensity results from irradiation by the scanning beam at the firstlocation on the first surface of the transparent sample, and where thebottom surface specular reflection intensity results from irradiation bythe scanning beam on the second surface of the transparent sample, and(c) storing coordinate values of the first location, the measured topsurface specular reflection intensity, and the measured bottom surfacespecular reflection intensity in a memory.

In a fifth novel aspect, a method for detecting defects includes (a)directing a scanning beam to a first location on a first surface of atransparent sample, where a portion of the scanning beam irradiates asecond surface of the transparent sample, (b) at the first location,measuring top surface specular reflection intensity and bottom surfacespecular reflection intensity, where both the top surface specularreflection intensity and the bottom surface specular reflectionintensity result from irradiation by the scanning beam at the firstlocation on the first surface of the transparent sample, and where thebottom surface specular reflection passes through a first polarizingelement before the measurement of the bottom surface specular reflectionintensity, and (c) storing coordinate values of the first location, themeasured top surface specular reflection intensity, and the measuredbottom surface specular reflection intensity in a memory.

In a first example, an optical inspector includes a turning mirror thatis a switchable mirror that can be (i) adjusted to a first positionwhere the turning mirror reflects the top surface specular reflectionand the bottom surface specular reflection, and (ii) can be adjusted toa second position where the turning mirror does not reflect the topsurface specular reflection or the bottom surface specular reflection.

In a second example, an optical inspector includes a first polarizingelement that receives the top surface specular reflection, where thefirst detector receives at least a portion of polarized top surfacespecular reflection that passed through the first polarizing element.

In a third example, an optical inspector includes a second polarizingelement that receives the bottom surface specular reflection, where thesecond detector receives at least a portion of polarized bottom surfacespecular reflection that passed through the second polarizing element.

Further details and embodiments and techniques are described in thedetailed description below. This summary does not purport to define theinvention. The invention is defined by the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, where like numerals indicate like components,illustrate embodiments of the invention.

FIG. 1 is a cross-sectional diagram illustrating a transparent sample(also referred to as a “transparent solid” or a “work piece”) supportedby a platform.

FIG. 2 is a cross-sectional diagram illustrating a scanning beamdirected at position located at (X1, Y1) on the transparent sample.

FIG.3 is a specular reflection mapping illustrating the specularreflection resulting from the irradiation at position (X1, Y1).

FIG. 4 is a cross-sectional diagram illustrating a scanning beamdirected at position located at (X1, Y6) on the transparent sample, whena top surface particle is present at (X1, Y6).

FIG. 5 is a specular reflection mapping illustrating the specularreflection resulting from the irradiation at position (X1, Y6).

FIG. 6 is a cross-sectional diagram illustrating a scanning beamdirected at position located at (X1, Y5) on the transparent sample, whena bottom surface particle is present at (X1, Y5).

FIG. 7 is a specular reflection mapping illustrating the specularreflection resulting from the irradiation at position (X1, Y5).

FIG. 8 is a cross-sectional diagram illustrating a scanning beamdirected at position located at (X1, Y4) on the transparent sample, whenan internal stress field is present at (X1, Y4).

FIG. 9 is a specular reflection mapping illustrating the specularreflection resulting from the irradiation at position (X1, Y4).

FIG. 10 is a cross-sectional diagram illustrating a scanning beamdirected at position located at (X2, Y1) on the transparent sample, whena top surface pit is present at (X2, Y4).

FIG. 11 is a specular reflection mapping illustrating the specularreflection resulting from the irradiation at position (X2, Y1).

FIG. 12 is a cross-sectional diagram illustrating a scanning beamdirected at position located at (X2, Y2) on the transparent sample, whena bottom surface pit is present at (X2, Y4).

FIG. 13 is a specular reflection mapping illustrating the specularreflection resulting from the irradiation at position (X2, Y2).

FIG. 14 is a top view diagram of a first optical inspector.

FIG. 15 is a top view diagram of a second optical inspector with apolarizing element.

FIG. 16 is a diagram illustrating exemplary separation mirror shapes.

FIG. 17 is a logic table illustrating a first method of detecting adefect location.

FIG. 18 is a logic table illustrating a second method of detecting adefect location.

FIG. 19 illustrates a result work piece defect mapping that is generatedby applying the logic described in the table of FIG. 17 to measurementsmeasured across the surface of the work piece.

FIG. 20 is a flowchart 200 illustrating the steps included in a defectdetection process.

FIG. 21 is a diagram illustrating the position and functionality of aseparation mirror.

DETAILED DESCRIPTION

Reference will now be made in detail to background examples and someembodiments of the invention, examples of which are illustrated in theaccompanying drawings. In the description and claims below, relationalterms such as “top”, “down”, “upper”, “lower”, “top”, “bottom”, “left”and “right” may be used to describe relative orientations betweendifferent parts of a structure being described, and it is to beunderstood that the overall structure being described can actually beoriented in any way in three-dimensional space.

FIG. 1 is a cross-sectional diagram illustrating a transparent samplesupported by a platform. During the fabrication of transparent samples(also referred to transparent work pieces, transparent layers,transparent wafers, transparent solids and transparent discs) unwanteddefects can be produced. These unwanted defects include a top surfaceparticle 3, a bottom surface particle 4, a stress field 5, an internalflaw, a top surface pit 6, a bottom surface pit 7, top and bottomsurface cracks (not shown), top and bottom surface stains (not shown),top and bottom surface scratches (not shown). These defects may occur invarious locations on the transparent sample. These defects result inundesirable results such as reduced operating life of a resultingdisplay device, non-functionality of the resulting display device, anddegraded performance (light efficiency) of the resulting display device.It is valuable for a display manufacturer to detect these defects beforeadditional resources are spent developing a product that will notfunction properly due to wafer level defects. For example, a top surfaceparticle may produce unwanted shielding on the top surface of thetransparent sample and may interfere with the ability to focus alithography pattern on the surface. Particles on the top surface mayalso cause electrical shorts to appear when metal lines are deposited onthis surface.

It is noted herein, the example of glass is used for exemplary use only.This disclosure is not limited to the detection of defects on glass.Rather, this disclosure is applicable to all transparent samples orwafers or discs regardless of the specific material constituting thesample/wafer/disc or the end device to be manufactured with thedeveloped sample/wafer/disc. For example, silicon is opaque in thevisible range of the spectrum but transparent in the infrared spectrum.Transparent samples may include at least the following materials: glass,plastic, quartz, sapphire, silicon, Silicon Carbide (SiC), and GalliumNitride (GaN).

The transparent sample in FIG. 1 is approximately one millimeter thick.No other materials directly abut the top surface or bottom surface ofthe transparent sample. Rather, the top surface and bottom surface ofthe transparent sample abuts open air. Another typical means ofsupporting the transparent sample is to use a set of pins that supportthe bottom of the sample at regular intervals. It is noted herein, thatother types of platforms exist and may be used to support a transparentsample. For example, a flat surface upon which the transparent samplerests may be used as a platform. In this example, the flat surface wouldcontact the entire bottom surface of the transparent sample (thereforethe bottom surface of the sample would not abut open air, but rather thetransporting surface directly).

The transparent sample (work piece 2) in FIG. 1 has multiple defects: atop surface particle 3, a bottom surface particle 4, a stress field 5caused by an internal flaw, a top surface pit 6, and a bottom surfacepit 7.

FIG. 2 is a cross-sectional diagram illustrating the work piece 2irradiated with a scanning beam 8 directed at position located at (X1,Y1). The scanning beam 8 scans across the work piece 2 in either theX-direction (in and out of the page) or the Y-direction. Significant topsurface specular reflection 9 is reflected from the top surface of thework piece 2 (referred to as “top surface specular reflection”).Significant specular reflection 10 is also reflected from the bottomsurface of the work piece 2 (referred to as “bottom surface specularreflection”). Top surface and bottom surface specular reflections 9 and10 are of similar intensity when no defects are present on eithersurface of the work piece.

The top surface specular reflection 9 is emitted from the top surface ofthe work piece 2 at a similar angle to the scanning beam angle ofincidence upon the top surface of the work piece 2. In the example shownin FIG. 2, the angle of incidence is three degrees from normal and theangle of specular reflection is three degrees from normal in theopposite direction.

The bottom surface specular reflection 10 is reflected from the bottomsurface of the work piece 2 at a similar angle to the scanning beamangle of incidence upon the bottom surface of the work piece 2. In theexample of FIG. 2, the angle of incidence at the bottom surface of thework piece 2 is less than three degrees from normal and the angle ofspecular reflection through the work piece 2 is less than three degreesfrom normal in the opposite direction. When the bottom surface specularreflection exits the work piece 2 the angle of the bottom surfacespecular reflection 10 is redirected to three degrees from normal(similar to the top surface specular reflection 9). However, due to theadditional distance traveled through the work piece at a non-zero angle,the location on the top surface of the work piece 2 at which the bottomsurface specular reflection 10 exits the work piece 2 is different thanthe location where the top surface specular reflection 9 is reflectedfrom the top surface of the work piece 2. The distance between these twolocations is labeled “D” in FIG. 2. An example of an apparatus formeasuring top surface specular reflection intensity and bottom surfacespecular reflection intensity is illustrated in FIG. 14.

FIG. 3 is a specular reflection mapping illustrating the top and bottomspecular reflection resulting from the irradiation at position (X1, Y1)illustrated in FIG. 2. The top and bottom specular reflection mappingshows that no significant variation in measured specular reflectionintensity is observed. More specifically, no significant variation inthe top surface specular reflection intensity is observed and nosignificant variation in the bottom surface specular reflectionintensity is observed. What is considered to be a “significantvariation” is based on multiple factors. Such factors may include: thetype of transparent sample being tested, the type of defect that isbeing detected, the frequency of the scanning beam 8, and the intensityof the scanning beam 8. In one example, it may be sufficient todetermine that the measured specular reflection intensity is above asingle threshold value. In another example, it may be sufficient todetermine that the measured specular reflection intensity is below asingle threshold value. In yet another example, it may be necessary todetermine that the measured specular reflection intensity is within aspecific range. These thresholds and ranges may be determined based oncalculations describing variations of light reflections in the presenceof various types of defects and setup conditions. Alternatively,threshold and ranges may be determined empirically by scanning atransparent sample with known defects and measuring the variations inspecular reflection intensity caused by the known defects.

In one embodiment of the present invention, a scan of the transparentsample is first conducted, then a user defined set of thresholds orranges are applied to determine the presence and location of a defect onthe transparent sample. The defined set of thresholds and ranges can beadjusted to fine tune the detection of defects on a specific type oftransparent sample under test.

The specular reflection intensities measured at position (X1, Y1)indicates that both the top surface specular reflection intensity andthe bottom surface specular reflection intensity are within anacceptable range, which indicates that the work piece 2 does not haveany defects at position (X1, Y1).

FIG. 4 is a cross-sectional diagram illustrating the work piece 2irradiated with a scanning beam 8 directed at position located at (X1,Y6). The scanning beam 8 is directed toward position (X1, Y6) on the topsurface of the work piece 2. However, before irradiating the top surfaceof the work piece 2, the scanning beam 8 irradiates top surface particle3 located at position (X1, Y6). Irradiation of top surface particle 3causes scattered radiation 11. The scattered radiation 11 causes adecrease in top surface specular reflection 9 because the scattering ofreflected light causes only a portion of the reflected light to travelalong the path of top surface specular reflection 9. Irradiation of topsurface particle 3 can also cause a decrease in bottom surface specularreflection 10 because a portion of the scanning beam 8 is blocked fromentering the work piece 2 and does not reach the bottom surface of thework piece 2, therefore only a portion of the scattered radiation mayradiate along the path of the bottom surface specular reflection 10.Thus, observation of a decrease in top surface specular reflectionintensity and a decrease in bottom surface specular reflection intensityindicates that a defect is present at the top surface of work piece 2 atthe scan location (X1, Y6). This defect detection logic is illustratedin the defect detection logic table shown in FIG. 17. An example of anapparatus for measuring top surface specular reflection intensity andbottom surface specular reflection intensity is illustrated in FIG. 14.

FIG. 5 is a specular reflection mapping illustrating the top and bottomspecular reflection resulting from the irradiation at position (X1, Y6)illustrated in FIG. 4. The top and bottom specular reflection mappingshows that significant variation in measured top and bottom surfacespecular reflection intensity is observed. More specifically, a decreasein both top surface specular reflection intensity and bottom surfacespecular reflection intensity is observed at position (X1, Y6). Asdiscussed above, a decrease in top and bottom surface specularreflection indicates that a defect is present on the top surface of thework piece 2 at position (X1, Y6).

FIG. 6 is a cross-sectional diagram illustrating the work piece 2irradiated with a scanning beam 8 directed at position located at (X1,Y5). The scanning beam 8 irradiates position (X1, Y5) on the top surfaceof the work piece 2. A portion of scanning beam 8 is reflected by thetop surface of the work piece 2 and causes top surface specularreflection 9 without significant intensity variation.

A portion of the scanning beam 8 is not reflected by the top surface ofthe work piece 2 and is redirected into the work piece 2 at an angleslightly closer to normal due to the change of the index of refractionof the work piece 2 from the index of refraction of air. The portion ofthe scanning beam 8 then irradiates the bottom surface of work piece 2.At the position of irradiation on the bottom surface of the work piece2, a bottom surface particle 5 is present on the bottom surface of workpiece 2. The presence of the bottom surface particle 5 causes scatteredradiation 12. Scattered radiation 12 causes a decrease in bottom surfacespecular reflection because only a portion of the scattered radiation 12radiates along the path of bottom surface specular reflection 10. Thus,observation of no significant decrease in top surface specularreflection and a decrease in bottom surface specular reflectionindicates that a defect is present at the bottom surface of work piece 2at the scan location (X1, Y5). This defect detection logic isillustrated in the defect detection logic table shown in FIG. 17. Anexample of an apparatus for measuring top surface specular reflectionintensity and bottom surface specular reflection intensity isillustrated in FIG. 14.

FIG. 7 is a specular reflection mapping illustrating the bottom specularreflection resulting from the irradiation at position (X1, Y5)illustrated in FIG. 6. As mentioned above, there is no significantvariation in the top surface specular reflection intensity. The bottomsurface specular reflection mapping shows that significant variation inmeasured bottom surface specular reflection intensity is observed. Morespecifically, a decrease in bottom surface specular reflection intensityis observed at position (X1, Y5). As discussed above, the combination ofno significant decrease in top surface specular reflection intensity anda decrease in bottom surface specular reflection intensity indicatesthat a defect is present on the bottom surface of the work piece 2 atposition (X1, Y5).

FIG. 8 is a cross-sectional diagram illustrating the work piece 2irradiated with a scanning beam 8 directed at position located at (X1,Y4). The scanning beam 8 irradiates position (X1, Y4) on the top surfaceof the work piece 2. A portion of scanning beam 8 is reflected by thetop surface of the work piece 2 and causes top surface specularreflection 9 without significant intensity variation. The polarizationof the top surface specular reflection is not significantly altered.

A portion of the scanning beam 8 is not reflected by the top surface ofthe work piece 2 and is redirected into the work piece 2 at an angleslightly closer to normal due to the change of the index of refractionof the work piece 2 from the index of refraction of air. The portion ofthe scanning beam 8 irradiates stress field 5. Stress field 5 can becaused by an internal flaw such as a crack, void, internal defect, orcrystal slip line. Stress field 5 causes a change in the polarization ofscanning beam 8. As a result the polarization of the bottom surfacespecular reflection 10 is different from the polarization of scanningbeam 8. Stress field 5 may also cause a change in the amount of lightreflected along the path of the bottom surface specular reflection 10path.

FIG. 9 is a polarized specular reflection mapping illustrating thebottom specular reflection resulting from the irradiation at position(X1, Y4) illustrated in FIG. 8. Polarized specular reflection ismeasured using a polarizing element that only allows selected componentsof polarization to pass through the polarizing element before thespecular reflection intensity is measured. An example of an apparatusfor measuring polarized top surface specular reflection intensity andpolarized bottom surface specular reflection intensity is illustrated inFIG. 15. In some instances, the internal defect may result in a dipoleshape on the polarized bottom surface specular reflection mapping.

As mentioned above, there is no significant variation in the top surfacespecular reflection intensity or the top surface specular reflectionpolarization. The polarized bottom surface specular reflection mappingshows that significant variation in measured polarized bottom surfacespecular reflection intensity is observed. In one example, a decrease inpolarized bottom surface specular reflection intensity is observed atposition (X1, Y4). In another example, an increase in polarized bottomsurface specular reflection intensity is observed at position (X1, Y4).A change in the polarization of the bottom surface specular reflectioncan cause both an increase and a decrease in measured bottom surfacespecular reflection intensity because depending on the configuration ofthe polarizing element, the change in the polarization of the bottomsurface specular reflection can cause the polarization of the bottomsurface specular reflection to become more or less aligned with thepolarizing element. When the polarization of the bottom surface specularreflection becomes more aligned with the polarizing element, more of thebottom surface specular reflection will be measured. When thepolarization of the bottom surface specular reflection becomes lessaligned with the polarizing element, less of the bottom surface specularreflection will be measured. The combination of no significant decreasein top surface specular reflection intensity and a significant change inpolarized bottom surface specular reflection intensity indicates that adefect is present inside work piece 2 at position (X1, Y4). The logic ofthis determination is illustrated in defect detection logic tables shownin FIGS. 17 and 18.

FIG. 10 is a cross-sectional diagram illustrating the work piece 2irradiated with a scanning beam 8 directed at position located at (X2,Y1). Work piece 2 has a top surface pit 6 defect located at position(X2, Y1). Irradiation of top surface pit 6 causes scattered radiation13. The scattered radiation 13 causes a decrease in top surface specularreflection 9 because the scattering of reflected light causes only aportion of the reflected light to travel along the path of top surfacespecular reflection 9. Irradiation of top surface pit 6 also cases adecrease in bottom surface specular reflection 10 because the portion ofscanning beam 8 that enters the work piece 2 is scattered, therefore theonly a portion of the scattered radiation reflects from the bottomsurface of the work piece 2 along the path of the bottom surfacespecular reflection 10. Thus, observation of a decrease in top surfacespecular reflection and a decrease in bottom surface specular reflectionindicates that a defect is present at the top surface of work piece 2 atthe scan location (X2, Y1). This defect detection logic is illustratedin the defect detection logic table shown in FIG. 17. An example of anapparatus for measuring top surface specular reflection intensity andbottom surface specular reflection intensity is illustrated in FIG. 14.

FIG. 11 is a specular reflection mapping illustrating the top and bottomspecular reflection resulting from the irradiation at position (X2, Y1)illustrated in FIG. 10. The top and bottom specular reflection mappingshows that significant variation in measured top and bottom surfacespecular reflection intensity is observed. More specifically, a decreasein top and bottom surface specular reflection intensity is observed atposition (X2, Y1). As discussed above, a decrease in top and bottomsurface specular reflection indicates that a defect is present on thetop surface of the work piece 2 at position (X2, Y1).

FIG. 12 is a cross-sectional diagram illustrating the work piece 2irradiated with a scanning beam 8 directed at position located at (X2,Y2). Work piece 2 has a bottom surface pit 7 defect located at position(X2, Y2). Irradiation of the top surface at position (X2, Y2) causes topsurface specular reflection intensity with no significant variation. Aportion of scanning beam 8 enters work piece 2 and irradiates the bottomsurface pit 7. Irradiation of bottom surface pit 7 causes scatteredradiation 14. The scattered radiation 14 causes a decrease in bottomsurface specular reflection 10 because the scattering of reflected lightcauses only a portion of the reflected light to travel along the path ofbottom surface specular reflection 10. Irradiation of bottom surface pit7 does not significantly affect the top surface specular reflectionintensity. Thus, observation of no significant variation in top surfacespecular reflection intensity and a decrease in bottom surface specularreflection intensity indicates that a defect is present at the bottomsurface of work piece 2 at the scan location (X2, Y2). This defectdetection logic is illustrated in the defect detection logic table shownin FIG. 17. An example of an apparatus for measuring top surfacespecular reflection intensity and bottom surface specular reflectionintensity is illustrated in FIG. 14.

FIG. 13 is a specular reflection mapping illustrating the bottomspecular reflection resulting from the irradiation at position (X2, Y2)illustrated in FIG. 12. As mentioned above, the bottom surface pit 7does not cause a significant change in the top surface specularreflection intensity. The bottom specular reflection mapping shows thatsignificant variation in measured bottom surface specular reflectionintensity is observed. More specifically, a decrease in bottom surfacespecular reflection intensity is observed at position (X2, Y2). Asdiscussed above, no significant variation in top surface specularreflection intensity and a decrease in bottom surface specularreflection intensity indicates that a defect is present on the bottomsurface of the work piece 2 at position (X2, Y2).

FIG. 14 is a top view diagram of an optical inspector. The opticalinspector includes a radiating source 30, an outgoing half waveplate 31,a time varying beam reflector (rotating polygon 32), a telecentric scanlens 33, a start of scan detector 36, a first mirror 37, a focusing lens46, a separation mirror 41, a first photo detector 43, a second detector47, a processor 48, and a memory 49. It is noted herein, the use ofrotating polygon is exemplary. Any time varying beam reflector, such asa resonant galvanometer, a rotating double sided mirror, oracousto-optic beam deflector can be utilized as well.

The radiating source 30 irradiates outgoing half waveplate 31 with asource beam. In one example, the radiating source 30 is a laser.Outgoing half waveplate 31 allows the linear polarization of laser to berotated to a desired angle. The rotated linearly polarized beam isdirected by the rotating polygon 32 to a first location on thetelecentric scan lens 33. The angle at which the source beam approachesthe telecentric scan lens 33 depends upon the angle of rotation of therotating polygon 32 when the source beam contacts the rotating polygon32. However, regardless of the angle at which the source beam approachesthe telecentric scan lens 33, the telecentric scan lens 33 directs thesource beam to a work piece 34 at an angle that is substantially normalto the surface of the work piece 34. In one example, the work piece 34is the transparent sample (work piece 2) shown in FIG. 1 and thetelecentric scan lens 33 directs the source beam to the work piece 34 atan angle of approximately three degrees from normal.

The source beam directed, at a substantially normal angle, to the workpiece 34 generates a reflection of the source beam. A first portion ofthe reflected source beam is specular reflection. A second portion ofthe reflected source beam is near specular scattered radiation. Specularreflection is the mirror-like reflection of light from a surface, inwhich light from a single incoming direction is reflected into a singleoutgoing direction (in adherence with the law of reflection). Nearspecular scattered radiation is light which is scattered (or deflected)by defects in a region which is just outside the profile of the specularbeam. Measuring both the specular reflection and the near specularscattered radiation allows the detection of defects which may not bevisible in the specular reflection alone. Near specular scatteredradiation is referred to as scatter radiation herein.

As discussed above, the specular reflection includes top surfacespecular reflection and bottom surface specular reflection from thetransparent sample (work piece 34). The reflected radiation, includingtop surface specular reflection 39 and bottom surface specularreflection 40, is reflected back to the telecentric scan lens 33. Thetelecentric scan lens 33 directs the top surface specular reflection 39and the bottom surface specular reflection 40 to the rotating polygon32. The rotating polygon 32 directs the top surface specular reflection39 and bottom surface specular reflection 40 back toward the radiatingsource 30. At this point, separating the source beam from the reflectedlight would be impractical if both the source beam and the reflectedbeams were traveling in the same space. To avoid this problematicsituation, the radiating source 30 is placed at a location at an offsetfrom the central axis of the telecentric scan lens 33. This directs thereflected radiation away from the radiating source 30 without alteringthe source beam radiating from the radiating source 30.

Mirror 37 reflects both top surface specular reflection 39 and bottomsurface specular reflection 40 to focusing lens 46. Focusing lens 46focuses both the top surface specular reflection 39 and the bottomsurface specular reflection 40 to a focal point. In one example, thefocusing lens 46 is an achromatic lens. Separation mirror 41 is locatedapproximately at the focal point of focusing lens 46. Examples ofvarious shapes of the separation mirror are shown in FIG. 16. At thispoint of focus, the top surface specular reflection 39 is physicallyseparated from the bottom surface specular reflection 40. Thisseparation is illustrated in FIG. 21. The separation mirror 41 ispositioned to reflect the bottom surface specular reflection 40 whilenot affecting the propagation of top surface specular reflection 39.Separation mirror 41 reflects the bottom surface specular reflection 40toward detector 43 while allowing top surface specular reflection 39 tocontinue to detector 47. Thus, detector 43 is irradiated by the bottomsurface specular reflection 40 and detector 47 is irradiated by topsurface specular reflection 39.

The detector 43 is located such that the bottom surface specularreflection 40 should irradiate the center of detector 43. In oneexample, detector 43 is a bi-cell detector. In this example, the bottomsurface specular reflection irradiates the bi-cell detector 43 on thecenter line 44 between the two photodiodes included in the bi-celldetector 43. In the event that the bottom surface slope (the“micro-waviness”) of the work piece is not normal to the source beam,the resulting bottom surface specular reflection 40 will deviate fromthe center line 44. A deviation from the center line 44 will cause agreater amount of the bottom surface specular reflection 40 to irradiateone of the two photodiodes in the bi-cell detector 43. In response, thebi-cell detector 43 will output an increased difference value indicatinga change in the slope of the bottom surface of the work piece 34. Anegative difference value indicates a slope varying in a firstdirection. A positive difference value indicates a slope varying in asecond direction. The slope measured is the surface slope of the bottomsurface of the work piece 2 in direction perpendicular to the opticalscan line. Regardless of the deviation of the bottom surface specularreflection 40 from the center line 44, the bi-cell detector 43 willoutput a sum value indicating the intensity of the bottom surfacespecular reflection 40 from work piece 34. For additional informationregarding measurement of surface slope, see: U.S. patent applicationSer. No. 13/861,383 (U.S. Pat. No. 8,848,181) entitled “MULTI-SURFACESCATTERED RADIATION DIFFERENTIATION” filed on Apr. 12, 2013 (the entiresubject matter of which is incorporated herein by reference).

The detector 47 is located such that the top surface specular reflection39 should irradiate the center of detector 47. In one example, detector47 is a bi-cell detector. In this example, the top surface specularreflection irradiates the bi-cell detector 47 on the center line betweenthe two photodiodes included in the bi-cell detector 47. In the eventthat the top surface slope (the “micro-waviness”) of the work piece isnot normal to the source beam, the resulting top surface specularreflection 39 will deviate from the center line. A deviation from thecenter line will cause a greater amount of the top surface specularreflection 39 to irradiate one of the two photodiodes in the bi-celldetector 47. In response, the bi-cell detector 47 will output anincreased difference value indicating a change in the slope of the topsurface of the work piece 34. A negative difference value indicates aslope varying in a first direction. A positive difference valueindicates a slope varying in a second direction. The slope measured isthe surface slope of the top surface of the work piece 2 in directionperpendicular to the optical scan line. Regardless of the deviation ofthe bottom surface specular reflection 39 from the center line, thebi-cell detector 47 will output a sum value indicating the intensity ofthe top surface specular reflection 39 from work piece 34.

In one embodiment, the radiating source is a four hundred and fivenanometer laser and the work piece is glass. In another embodiment, theradiating source is a one thousand and sixty-four nanometer laser andthe work piece is silicon.

In another embodiment, detector 43 is rotatable about the optical axisof the bottom surface specular reflection 40 and detector 47 isrotatable about the optical axis of the top surface specular reflection39.

In yet another embodiment, the optical path length between the focusinglens and the first detector is approximately one-thousand, five-hundredmillimeters.

In one example, a processor 48 is also included in the top and bottomsurface optical inspector shown in FIG. 14. The processor 48 receives adifference output signal from bi-cell detector 43, a sum output signalfrom bi-cell detector 43, a difference output signal from bi-celldetector 47, and a sum output signal from bi-cell detector 47. Inresponse, processor 48 determines: if defects are present at the scanlocation on the work piece 34, if the defect is located on the topsurface of the work piece 34, if the defect is located on the bottomsurface of the work piece 34, and if the defect is located internal tothe work piece 34.

The processor may also communicate with a motor controlling rotatingpolygon 32. The processor may increase or decrease the rate of rotationof the rotating polygon 32. For example, when switching from using ahigh-bandwidth detector to a low-bandwidth detector, it may be requiredthat the rate of rotation of the rotating polygon 32 be decreased.Alternatively, when switching from using a low-bandwidth detector to ahigh-bandwidth detector, it may be necessary to increase the rate ofrotation of the rotating polygon 32.

In another example, memory 49 is included in the top and bottom surfaceoptical inspector shown in FIG. 14. Memory 49 stores information outputby processor 48. (i.e. defect location information, or defect indicatorinformation). Memory 49 also stores location information indicating thelocation on the work piece which was scanned to measure the defectinformation or defect indicator information. Defect information includesa status as to whether the scanned location on the work piece contains adefect and on which surface the defect present at the location. Defectindicator information includes various measurements from the scannedlocation on the work piece (i.e. top surface slope, bottom surfaceslope, top surface specular reflection intensity, and bottom surfacespecular reflection intensity).

In one example, the scan of the work piece is done with the polygonrotating at a high speed and the data sampling of the bi-cell detectoris run at approximately 16 MHz with the radiating source running at fullintensity. Since the rotating polygon can rotate at high speeds, anentire 100mm diameter work piece can be measured in about ten seconds.

In another example, the rotating polygon begins to spin upon power up ofthe device and continues to spin until the entire device is powered off.The constant spinning of the rotating polygon during operation isbeneficial in that spin-up and spin-down delay time is eliminated duringregular operation. The work piece is moved in one direction (not shown)by a precision stage to make a map of the entire work piece surface. Inone embodiment, shown in FIG. 14, the optical inspector includes a startof scan photodetector 36 which is placed at the edge of the scan lineand serves to trigger the acquisition of data sampling when the scannedbeam passes over the detector 36.

This above process is repeated as the work piece 34 is moved underneaththe optical inspector. A precision stage controller directs the movementof the work piece 34 during the inspection process. In one example, theprocessor 48 outputs defect inspection data which is logged along withthe work piece scan location. The number and location of defects on thework piece will determine the disposition of the work piece. In oneexample, depending upon the location and type of defect, some portionsof the work piece may be useful and others portions of the work piecemay be discarded. In another example, if the work piece has many defectsthen the entire work piece may be discarded.

It is noted herein, that bi-cell detectors 43 and 47 are of exemplaryuse in this disclosure. One skilled in the art will readily realize thatthe bi-cell detectors 43 and 47 may be replaced with various multi-celldetectors to achieve the utility of the present invention.

In another embodiment, mirror 37 is a switchable mirror that can beadjusted to not reflect the top and bottom surface specular reflections39 and 40. A switchable mirror 37 allows for a single optical inspectorincluding two different optical measurement instruments to selectbetween the use of either optical measurement instrument by simplyswitching the position of mirror 37.

FIG. 15 is a top view diagram of an optical inspector with a polarizingelement. The optical inspection illustrated in FIG. 15 performs asimilar fashion as the optical inspector illustrated in FIG. 14, but atleast one polarizing element to control the components of polarizationthat irradiate a detector.

In one example, the optical inspector includes a single polarizingelement 55 that controls the components of polarization that irradiatedetector 63. As discussed above regarding FIGS. 8 and 9, setting therotational angle of the polarizing element allows only one component ofpolarization of bottom surface specular reflection to irradiate detector63. This allows detector 63 to measure changes in polarization of thebottom surface specular reflection due to a stress field in a workpiece. For example, when the scanning beam travels through a stressfield, the polarization of the bottom surface specular reflection isaltered, which can cause an increase or decrease in the amount of lightthat will pass through the polarizing element.

In another example, the optical inspector includes a single polarizingelement 62 that controls the components of polarization that irradiatedetector 67. Setting the rotational angle of the polarizing element toonly allow one component of polarization of the top surface specularreflection to irradiate detector 67 allows detector 67 to measurechanges in polarization of the top surface specular reflection due to asurface defect in a work piece. For example, when the scanning beamtravels through a top surface stain, the polarization of the top surfacespecular reflection is altered, which can cause an increase or decreasein the amount of light that will pass through the polarizing element.

In yet another embodiment, the optical inspector includes two polarizingelements 55 and 62. Polarizing element 55 controls the components ofpolarization that irradiate detector 63. As discussed above regardingFIGS. 8 and 9, setting the rotational angle of the polarizing element toonly allow one component of polarization of bottom surface specularreflection to irradiate detector 63 allows detector 63 to measurechanges in polarization of the bottom surface specular reflection due toa stress field in a work piece. For example, when the scanning beamtravels through a stress field, the polarization of the bottom surfacespecular reflection is altered, which can cause an increase or decreasein the amount of light that will pass through the polarizing element.

Polarizing element 62 controls the components of polarization thatirradiate detector 67. Setting the rotational angle of the polarizingelement to only allow one component of polarization of the top surfacespecular reflection to irradiate detector 67 allows detector 67 tomeasure changes in polarization of the top surface specular reflectiondue to a surface defect in a work piece. For example, when the scanningbeam travels through a top surface stain, the polarization of the topsurface specular reflection is altered, which can cause an increase ordecrease in the amount of light that will pass through the polarizingelement.

Use of a polarizing element allows the optical inspector to detectdefects such as: stress fields caused by internal flaws, top and bottomsurface stains, top and bottom surface cracks, and top and bottomsurface scratches. In each of these defect situations, the polarizationof the specular reflection is altered by the defect. Therefore,utilization of an optical inspector with a polarizing element asdisclosed in FIG. 15 allows detection of the presence of these types ofdefects on either the top, bottom or internal to the work piece.

As discussed in above, either of the two defect detection tables shownin FIGS. 17 and 18 can be used to determine the surface location of adefect. For some types of defects it may be sufficient to only determineif a decrease below a threshold value in specular reflection intensityoccurred in the top surface specular reflection intensity (shown in FIG.17). For other types of defects it may be necessary to determine if adecrease below a threshold value in specular reflection intensityoccurred in both the top surface specular reflection intensity and thebottom surface specular reflection intensity. The threshold value forthe top surface specular reflection intensity may be different from thethreshold value for the bottom surface specular reflection intensity.

In other situations, it may be sufficient to only determine if anincrease above a threshold value in specular reflection intensityoccurred in the top surface specular reflection intensity (not shown).Alternatively, it may be necessary to determine if an increase above athreshold value in specular reflection occurred in both the top surfacespecular reflection intensity and the bottom surface specular reflectionintensity. The threshold value for the top surface specular reflectionintensity may be different from the threshold value for the bottomsurface specular reflection intensity.

It may also be useful to determine if the measured specular reflectionintensity is within a specific range of specular reflection intensities(shown in FIG. 18). A first range of specular reflection intensityvalues may be defined for top surface specular reflection intensity anda second range of specular reflection intensity values may be definedfor bottom surface specular reflection intensity.

FIG. 19 illustrates a result work piece defect mapping that is generatedby applying the logic described in the table of FIGS. 17 and 18 tomeasurements measured across the surface of the work piece. The workpiece defect mapping can be used by work piece manufacturers to identifythe parts of the work piece that are not to have additional processingso as to not waste resources and further develop a portion of the workpiece that is defective.

FIG. 20 is a flowchart 200 illustrating the steps included in the defectdetection process. In step 201, the work piece is irradiated with ascanning beam. In step 202, top surface specular reflection intensity ismeasured. In step 203, bottom surface specular reflection intensity ismeasured. In step 204, it is determined if a significant change in topsurface specular reflection intensity has occurred. In step 205, it isdetermined if a significant change in bottom surface specular reflectionintensity has occurred. In one example, steps 202 through 205 areperformed simultaneously. In step 206, the presence of a defect and thesurface on which the defect is located is determined using themeasurements taken in steps 202 through 205. In step 207, the surfacelocation of the defect determined in step 206 and the scanning locationon the work piece is used to generate a work piece defect mapping.

Although certain specific embodiments are described above forinstructional purposes, the teachings of this patent document havegeneral applicability and are not limited to the specific embodimentsdescribed above. Accordingly, various modifications, adaptations, andcombinations of various features of the described embodiments can bepracticed without departing from the scope of the invention as set forthin the claims.

1. A method for detecting defects, comprising: (a) directing a scanningbeam to a first location on a first surface of a transparent sample,wherein a portion of the scanning beam irradiates a second surface ofthe transparent sample; (b) at the first location, measuring top surfacespecular reflection intensity, wherein the top surface specularreflection intensity results from irradiation by the scanning beam atthe first location on the first surface of the transparent sample; (c)storing coordinate values of the first location and the measured topsurface specular reflection intensity in a memory; (d) comparing the topsurface specular reflection intensity measured with an expected topsurface specular reflection intensity value; and (e) determining that adefect is present on the top surface of the transparent sample when themeasured top surface specular reflection intensity is less than theexpected top surface specular reflection intensity value.
 2. The methodof claim 1, further comprising: (f) measuring bottom surface specularreflection intensity; (g) comparing the measured bottom surface specularreflection intensity with an expected bottom surface specular reflectionintensity value; and (h) determining that a defect is present at bottomsurface of the transparent sample when the top surface specularreflection intensity is equal to or greater than the expected topsurface specular reflection intensity value and the bottom surfacespecular reflection intensity is less than the expected bottom surfacespecular reflection intensity value.
 3. The method of claim 2, furthercomprising: (i) repeating steps (a) through (h) at a plurality oflocations on the first surface of the first transparent sample.
 4. Themethod of claim 1, wherein the defect is one selected from the groupconsisting of: (1) a top surface particle, (2) a bottom surfaceparticle, (3) a bottom surface pit, (4) a top surface pit, (5) a topsurface scratch, (6) a bottom surface scratch, (7) a top surface stain,(8) a bottom surface stain, (9) an internal crack, (10) an internalstress field, (11) an internal void, or (12) an internal defect. 5.(canceled)
 6. (canceled)
 7. The method of claim 1, wherein thetransparent sample is one selected from a group comprising, glass,plastic, quartz, sapphire, silicon, Silicon Carbide (SiC), and GalliumNitride (GaN).
 8. The method of claim 1, wherein the directing of thescanning beam to the first location on the first surface of thetransparent sample is performed, at least in part, by a radiatingsource, a rotating polygon, and a telecentric scan lens.
 9. The methodof claim 1, further comprising: (f) measuring top surface slope at thefirst location, wherein the measuring of top surface slope is performed,at least in part, by an achromatic lens and a bi-cell detector.
 10. Themethod of claim 1, further comprising: (f) measuring bottom surfaceslope at the first location, wherein the measuring of bottom surfaceslope is performed, at least in part, by an achromatic lens, and abi-cell detector.
 11. A method for detecting defects, comprising: (a)directing a scanning beam to a first location on a first surface of atransparent sample, wherein a portion of the scanning beam irradiates asecond surface of the transparent sample; (b) at the first location,measuring top surface specular reflection intensity, wherein the topsurface specular reflection intensity result from irradiation by thescanning beam at the first location on the first surface of thetransparent sample; (c) storing coordinate values of the first locationand the measured top surface specular reflection intensity in a memory;(d) determining if the measured top surface specular reflectionintensity is within a first intensity range, wherein the first intensityrange includes an expected top surface specular reflection intensityvalue; and (e) determining that a defect is present on the top surfaceof the transparent sample when the measured top surface specularreflection intensity is not within the first intensity range.
 12. Themethod of claim 11, further comprising: (f) repeating steps (a) through(e) at a plurality of locations on the first surface of the firsttransparent sample.
 13. The method of claim 11, further comprising: (f)at the first location, measuring bottom surface specular reflectionintensity; (g) comparing the measured bottom surface specular reflectionintensity with a second intensity range; (h) determining if the measuredbottom surface specular reflection intensity is within a secondintensity range, wherein the second intensity range includes an expectedbottom surface specular reflection intensity value; and (i) determiningthat a defect is present on the bottom surface of the transparent samplewhen the measured top surface specular reflection intensity is withinthe first intensity range and the measured bottom surface specularreflection is not within the second intensity range.
 14. The method ofclaim 11, wherein the top surface specular reflection passes through asecond polarizing element before the measurement of the top surfacespecular reflection intensity.
 15. The method of claim 11, wherein thedefect is selected from the group consisting of: (1) a top surfacecrack, (2) a bottom surface crack, (3) an internal stress field, (4) aninternal void, or (5) an internal defect.
 16. (canceled)
 17. (canceled)18. The method of claim 11, wherein the directing of the scanning beamto the first location on the first surface of the transparent sample isperformed, at least in part, by a radiating source, a rotating polygon,and a telecentric scan lens.
 19. The method of claim 11, wherein thepolarizing element is a polarizing beam splitter, and wherein themeasuring of specular reflection intensity is performed, at least inpart, by an achromatic lens, a bi-cell detector, and the polarizing beamsplitter.
 20. The method of claim 11, wherein the measuring of specularreflection intensity is performed, at least in part, by an achromaticlens, a bi-cell detector, a polarizing element, and a separation mirror.